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HFA3046, HFA3096, HFA3127, HFA3128
Data Sheet December 21, 2005 FN3076.13
Ultra High Frequency Transistor Arrays
The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation's complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Intersil provides an Application Note illustrating the use of these devices as RF amplifiers. For more information, visit our website at www.intersil.com.
Features
* NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz * NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 130 * NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V * PNP Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz * PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 60 * PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . .20V * Noise Figure (50) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB * Collector to Collector Leakage . . . . . . . . . . . . . . . . . .<1pA * Complete Isolation Between Transistors * Pin Compatible with Industry Standard 3XXX Series Arrays * Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
* VHF/UHF Amplifiers * VHF/UHF Mixers * IF Converters * Synchronous Detectors
Ordering Information
PART NUMBER* HFA3046B HFA3046BZ (Note) HFA3096B HFA3096BZ (Note) HFA3127B HFA3127BZ (Note) HFA3127R HFA3127RZ (Note) HFA3128B HFA3128BZ (Note) HFA3128R HFA3128RZ (Note) PART MARKING HFA3046B HFA3046BZ HFA3096B HFA3096BZ HFA3127B HFA3127BZ 127 127Z HFA3128B HFA3128BZ 128 128Z TEMP. RANGE (C) -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 PACKAGE 14 Ld SOIC 14 Ld SOIC (Pb-free) 16 Ld SOIC 16 Ld SOIC (Pb-free) 16 Ld SOIC 16 Ld SOIC (Pb-free) 16 Ld 3x3 QFN 16 Ld 3x3 QFN (Pb-free) 16 Ld SOIC 16 Ld SOIC (Pb-free) 16 Ld 3x3 QFN 16 Ld 3x3 QFN (Pb-free) PKG. DWG. # M14.15 M14.15 M16.15 M16.15 M16.15 M16.15 L16.3x3 L16.3x3 M16.15 M16.15 L16.3x3 L16.3x3
*Add "96" suffix for tape and reel. NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 1998, 2005. All Rights Reserved All other trademarks mentioned are the property of their respective owners.
HFA3046, HFA3096, HFA3127, HFA3128 Pinouts
HFA3046 TOP VIEW
1 2 3 4 5 6 7 Q3 Q2 Q1 Q5 14 13 12 11 Q4 10 9 8 1 2 3 4 5 6 7 8 Q3 Q2 Q4 Q1 Q5
HFA3096 TOP VIEW
16 NC 15 14 13 12 11 10 9 1 2 3 4 NC 5 6 7 8
HFA3127 TOP VIEW
Q1 16 15 14 13 12 11 Q3 Q4 10 9 1 2 3 4 NC 5 6 7 8
HFA3128 TOP VIEW
Q1 16 15 14 13 12 11 Q3 Q4 10 9
Q2
Q5
Q2
Q5
HFA3127, HFA3128 TOP VIEW
Q2C Q1C Q1B 13 12 Q5B 11 Q5E 10 Q5C 9 5 Q3E 6 Q3B 7 Q4B 8 Q4E Q4C Q1E 14
16 Q2E 1 Q2B 2 NC 3 Q3C 4
15
2
FN3076.13 December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Absolute Maximum Ratings
Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V Collector Current (100% Duty Cycle) . . . . . . 18.5mA at TJ = 150C 34mA at TJ = 125C 37mA at TJ = 110C Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA
Thermal Information
Thermal Resistance (Typical) JA (C/W) JC (C/W) 14 Ld SOIC Package (Note 1) . . . . . . . 120 N/A 16 Ld SOIC Package (Note 1) . . . . . . . 115 N/A QFN Package (Notes 2, 3). . . . . . . . . . 57 10 Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175C Maximum Junction Temperature (Plastic Package) . . . . . . . 150C Maximum Storage Temperature Range . . . . . . . . . . -65C to 150C Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300C (SOIC - Lead Tips Only)
Operating Information
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55C to 125C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. JA is measured with the component mounted on an evaluation PC board in free air. 2. For JC, the "case temp" location is the center of the exposed metal pad on the package underside. 3. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications
PARAMETER DC NPN CHARACTERISTICS Collector to Base Breakdown Voltage, V(BR)CBO Collector to Emitter Breakdown Voltage, V(BR)CEO Collector to Emitter Breakdown Voltage, V(BR)CES Emitter to Base Breakdown Voltage, V(BR)EBO Collector-Cutoff-Current, ICEO Collector-Cutoff-Current, ICBO Collector to Emitter Saturation Voltage, VCE(SAT) Base to Emitter Voltage, VBE DC Forward-Current Transfer Ratio, hFE Early Voltage, VA Base to Emitter Voltage Drift Collector to Collector Leakage
TA = 25C DIE TEST CONDITIONS MIN TYP MAX MIN SOIC, QFN TYP MAX UNITS
IC = 100A, IE = 0 IC = 100A, IB = 0 IC = 100A, Base Shorted to Emitter IE = 10A, IC = 0 VCE = 6V, IB = 0 VCB = 8V, IE = 0 IC = 10mA, IB = 1mA IC = 10mA IC = 10mA, VCE = 2V IC = 1mA, VCE = 3.5V IC = 10mA
12 8 10 5.5 40 20 -
18 12 20 6 2 0.1 0.3 0.85 130 50 -1.5 1
100 10 0.5 0.95 -
12 8 10 5.5 40 20 -
18 12 20 6 2 0.1 0.3 0.85 130 50 -1.5 1
100 10 0.5 0.95 -
V V V V nA nA V V
V mV/C pA
Electrical Specifications
PARAMETER
TA = 25C DIE TEST CONDITIONS MIN TYP MAX MIN SOIC, QFN TYP MAX UNITS
DYNAMIC NPN CHARACTERISTICS Noise Figure fT Current Gain-Bandwidth Product f = 1.0GHz, VCE = 5V, IC = 5mA, ZS = 50 IC = 1mA, VCE = 5V IC = 10mA, VCE = 5V 3.5 5.5 8 3.5 5.5 8 dB GHz GHz
3
FN3076.13 December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Electrical Specifications
PARAMETER Power Gain-Bandwidth Product, fMAX Base to Emitter Capacitance Collector to Base Capacitance TA = 25C (Continued) DIE TEST CONDITIONS IC = 10mA, VCE = 5V VBE = -3V VCB = 3V TA = 25C DIE PARAMETER DC PNP CHARACTERISTICS Collector to Base Breakdown Voltage, V(BR)CBO Collector to Emitter Breakdown Voltage, V(BR)CEO Collector to Emitter Breakdown Voltage, V(BR)CES Emitter to Base Breakdown Voltage, V(BR)EBO Collector Cutoff Current, ICEO Collector Cutoff Current, ICBO Collector to Emitter Saturation Voltage, VCE(SAT) Base to Emitter Voltage, VBE DC Forward-Current Transfer Ratio, hFE Early Voltage, VA Base to Emitter Voltage Drift Collector to Collector Leakage IC = -100A, IE = 0 IC = -100A, IB = 0 IC = -100A, Base Shorted to Emitter IE = -10A, IC = 0 VCE = -6V, IB = 0 VCB = -8V, IE = 0 IC = -10mA, IB = -1mA IC = -10mA IC = -10mA, VCE = -2V IC = -1mA, VCE = -3.5V IC = -10mA 10 8 10 4.5 20 10 TA = 25C DIE PARAMETER DYNAMIC PNP CHARACTERISTICS Noise Figure fT Current Gain-Bandwidth Product Power Gain-Bandwidth Product Base to Emitter Capacitance Collector to Base Capacitance f = 1.0GHz, VCE = -5V, IC = -5mA, ZS = 50 IC = -1mA, VCE = -5V IC = -10mA, VCE = -5V IC = -10mA, VCE = -5V VBE = 3V VCB = -3V 3.5 2 5.5 3 200 300 3.5 2 5.5 2 500 600 dB GHz GHz GHz fF fF TEST CONDITIONS MIN TYP MAX MIN SOIC, QFN TYP MAX UNITS 15 15 15 5 2 0.1 0.3 0.85 60 20 -1.5 1 100 10 0.5 0.95 10 8 10 4.5 20 10 15 15 15 5 2 0.1 0.3 0.85 60 20 -1.5 1 100 10 0.5 0.95 V mV/C pA V V V V nA nA V V TEST CONDITIONS MIN TYP MAX MIN SOIC, QFN TYP MAX UNITS MIN TYP 6 200 200 MAX MIN SOIC, QFN TYP 2.5 500 500 MAX UNITS GHz fF fF
Electrical Specifications
Electrical Specifications
4
FN3076.13 December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Electrical Specifications
TA = 25C (Continued) DIE PARAMETER TEST CONDITIONS MIN TYP MAX MIN SOIC, QFN TYP MAX UNITS
DIFFERENTIAL PAIR MATCHING CHARACTERISTICS FOR THE HFA3046 Input Offset Voltage Input Offset Current Input Offset Voltage TC IC = 10mA, VCE = 5V IC = 10mA, VCE = 5V IC = 10mA, VCE = 5V 1.5 5 0.5 5.0 25 1.5 5 0.5 5.0 25 mV A V/C
S-Parameter and PSPICE model data is available from Intersil Sales Offices, and Intersil Corporation's web site.
Common Emitter S-Parameters of NPN 3 m x 50 m Transistor
FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) VCE = 5V and IC = 5mA 1.0E+08 2.0E+08 3.0E+08 4.0E+08 5.0E+08 6.0E+08 7.0E+08 8.0E+08 9.0E+08 1.0E+09 1.1E+09 1.2E+09 1.3E+09 1.4E+09 1.5E+09 1.6E+09 1.7E+09 1.8E+09 1.9E+09 2.0E+09 2.1E+09 2.2E+09 2.3E+09 2.4E+09 2.5E+09 2.6E+09 2.7E+09 2.8E+09 2.9E+09 3.0E+09 0.83 0.79 0.73 0.67 0.61 0.55 0.50 0.46 0.42 0.39 0.36 0.34 0.32 0.30 0.28 0.27 0.25 0.24 0.23 0.22 0.21 0.20 0.20 0.19 0.18 0.18 0.17 0.17 0.16 0.16 -11.78 -22.82 -32.64 -41.08 -48.23 -54.27 -59.41 -63.81 -67.63 -70.98 -73.95 -76.62 -79.04 -81.25 -83.28 -85.17 -86.92 -88.57 -90.12 -91.59 -92.98 -94.30 -95.57 -96.78 -97.93 -99.05 -100.12 -101.15 -102.15 -103.11 11.07 10.51 9.75 8.91 8.10 7.35 6.69 6.11 5.61 5.17 4.79 4.45 4.15 3.89 3.66 3.45 3.27 3.10 2.94 2.80 2.68 2.56 2.45 2.35 2.26 2.18 2.10 2.02 1.96 1.89 168.57 157.89 148.44 140.36 133.56 127.88 123.10 119.04 115.57 112.55 109.91 107.57 105.47 103.57 101.84 100.26 98.79 97.43 96.15 94.95 93.81 92.73 91.70 90.72 89.78 88.87 88.00 87.15 86.33 85.54 1.41E-02 2.69E-02 3.75E-02 4.57E-02 5.19E-02 5.65E-02 6.00E-02 6.27E-02 6.47E-02 6.63E-02 6.75E-02 6.85E-02 6.93E-02 7.00E-02 7.05E-02 7.10E-02 7.13E-02 7.17E-02 7.19E-02 7.21E-02 7.23E-02 7.25E-02 7.27E-02 7.28E-02 7.29E-02 7.30E-02 7.31E-02 7.31E-02 7.32E-02 7.32E-02 78.88 68.63 59.58 51.90 45.50 40.21 35.82 32.15 29.07 26.45 24.19 22.24 20.53 19.02 17.69 16.49 15.41 14.43 13.54 12.73 11.98 11.29 10.64 10.05 9.49 8.96 8.47 8.01 7.57 7.16 0.97 0.93 0.86 0.79 0.73 0.67 0.62 0.57 0.53 0.50 0.47 0.45 0.43 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.35 0.34 0.34 0.33 0.33 0.33 0.33 0.33 0.33 0.33 -11.05 -21.35 -30.44 -38.16 -44.59 -49.93 -54.37 -58.10 -61.25 -63.96 -66.31 -68.37 -70.19 -71.83 -73.31 -74.66 -75.90 -77.05 -78.12 -79.13 -80.09 -80.99 -81.85 -82.68 -83.47 -84.23 -84.97 -85.68 -86.37 -87.05
5
FN3076.13 December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of NPN 3 m x 50 m Transistor
FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| VCE = 5V and IC = 10mA 1.0E+08 2.0E+08 3.0E+08 4.0E+08 5.0E+08 6.0E+08 7.0E+08 8.0E+08 9.0E+08 1.0E+09 1.1E+09 1.2E+09 1.3E+09 1.4E+09 1.5E+09 1.6E+09 1.7E+09 1.8E+09 1.9E+09 2.0E+09 2.1E+09 2.2E+09 2.3E+09 2.4E+09 2.5E+09 2.6E+09 2.7E+09 2.8E+09 2.9E+09 3.0E+09 0.72 0.67 0.60 0.53 0.47 0.42 0.37 0.34 0.31 0.29 0.27 0.25 0.24 0.22 0.21 0.20 0.20 0.19 0.18 0.18 0.17 0.17 0.16 0.16 0.16 0.15 0.15 0.15 0.15 0.14 -16.43 -31.26 -43.76 -54.00 -62.38 -69.35 -75.26 -80.36 -84.84 -88.83 -92.44 -95.73 -98.75 -101.55 -104.15 -106.57 -108.85 -110.98 -113.00 -114.90 -116.69 -118.39 -120.01 -121.54 -122.99 -124.37 -125.69 -126.94 -128.14 -129.27 15.12 13.90 12.39 10.92 9.62 8.53 7.62 6.86 6.22 5.69 5.23 4.83 4.49 4.19 3.93 3.70 3.49 3.30 3.13 2.98 2.84 2.72 2.60 2.49 2.39 2.30 2.22 2.14 2.06 1.99 165.22 152.04 141.18 132.57 125.78 120.37 116.00 112.39 109.36 106.77 104.51 102.53 100.75 99.16 97.70 96.36 95.12 93.96 92.87 91.85 90.87 89.94 89.06 88.21 87.39 86.60 85.83 85.09 84.36 83.66 1.27E-02 2.34E-02 3.13E-02 3.68E-02 4.05E-02 4.31E-02 4.49E-02 4.63E-02 4.72E-02 4.80E-02 4.86E-02 4.90E-02 4.94E-02 4.97E-02 4.99E-02 5.01E-02 5.03E-02 5.05E-02 5.06E-02 5.07E-02 5.08E-02 5.09E-02 5.10E-02 5.11E-02 5.12E-02 5.12E-02 5.13E-02 5.13E-02 5.14E-02 5.15E-02 75.41 62.89 52.58 44.50 38.23 33.34 29.47 26.37 23.84 21.75 20.00 18.52 17.25 16.15 15.19 14.34 13.60 12.94 12.34 11.81 11.33 10.89 10.50 10.13 9.80 9.49 9.21 8.95 8.71 8.49 0.95 0.88 0.79 0.70 0.63 0.57 0.51 0.47 0.44 0.41 0.39 0.37 0.35 0.34 0.33 0.32 0.31 0.31 0.30 0.30 0.30 0.29 0.29 0.29 0.29 0.29 0.29 0.29 0.29 0.29 -14.26 -26.95 -37.31 -45.45 -51.77 -56.72 -60.65 -63.85 -66.49 -68.71 -70.62 -72.28 -73.76 -75.08 -76.28 -77.38 -78.41 -79.37 -80.27 -81.13 -81.95 -82.74 -83.50 -84.24 -84.95 -85.64 -86.32 -86.98 -87.62 -88.25 (Continued) |S22| PHASE(S22)
PHASE(S12)
Common Emitter S-Parameters of PNP 3 m x 50 m Transistor
FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) VCE = -5V and IC = -5mA 1.0E+08 2.0E+08 3.0E+08 4.0E+08 5.0E+08 0.72 0.68 0.62 0.57 0.52 -16.65 -32.12 -45.73 -57.39 -67.32 10.11 9.44 8.57 7.68 6.86 166.77 154.69 144.40 135.95 129.11 1.66E-02 3.10E-02 4.23E-02 5.05E-02 5.64E-02 77.18 65.94 56.39 48.66 42.52 0.96 0.90 0.82 0.74 0.67 -10.76 -20.38 -28.25 -34.31 -38.81
6
FN3076.13 December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of PNP 3 m x 50 m Transistor
FREQ. (Hz) 6.0E+08 7.0E+08 8.0E+08 9.0E+08 1.0E+09 1.1E+09 1.2E+09 1.3E+09 1.4E+09 1.5E+09 1.6E+09 1.7E+09 1.8E+09 1.9E+09 2.0E+09 2.1E+09 2.2E+09 2.3E+09 2.4E+09 2.5E+09 2.6E+09 2.7E+09 2.8E+09 2.9E+09 3.0E+09 |S11| 0.47 0.43 0.40 0.38 0.36 0.34 0.33 0.32 0.30 0.30 0.29 0.28 0.28 0.27 0.27 0.26 0.26 0.26 0.25 0.25 0.25 0.25 0.25 0.24 0.24 PHASE(S11) -75.83 -83.18 -89.60 -95.26 -100.29 -104.80 -108.86 -112.53 -115.86 -118.90 -121.69 -124.24 -126.59 -128.76 -130.77 -132.63 -134.35 -135.96 -137.46 -138.86 -140.17 -141.39 -142.54 -143.62 -144.64 |S21| 6.14 5.53 5.01 4.56 4.18 3.86 3.58 3.33 3.12 2.92 2.75 2.60 2.47 2.34 2.23 2.13 2.04 1.95 1.87 1.80 1.73 1.67 1.61 1.56 1.51 PHASE(S21) 123.55 118.98 115.17 111.94 109.17 106.76 104.63 102.72 101.01 99.44 98.01 96.68 95.44 94.29 93.19 92.16 91.18 90.24 89.34 88.48 87.65 86.85 86.07 85.31 84.58 |S12| 6.07E-02 6.37E-02 6.60E-02 6.77E-02 6.91E-02 7.01E-02 7.09E-02 7.16E-02 7.22E-02 7.27E-02 7.32E-02 7.35E-02 7.39E-02 7.42E-02 7.45E-02 7.47E-02 7.50E-02 7.52E-02 7.55E-02 7.57E-02 7.59E-02 7.61E-02 7.63E-02 7.65E-02 7.67E-02 (Continued) |S22| 0.61 0.55 0.51 0.47 0.44 0.41 0.39 0.37 0.36 0.34 0.33 0.32 0.31 0.30 0.30 0.29 0.28 0.28 0.28 0.27 0.27 0.26 0.26 0.26 0.26 PHASE(S22) -42.10 -44.47 -46.15 -47.33 -48.15 -48.69 -49.05 -49.26 -49.38 -49.43 -49.44 -49.43 -49.40 -49.38 -49.36 -49.35 -49.35 -49.38 -49.42 -49.49 -49.56 -49.67 -49.81 -49.96 -50.13
PHASE(S12) 37.66 33.79 30.67 28.14 26.06 24.33 22.89 21.67 20.64 19.76 19.00 18.35 17.79 17.30 16.88 16.52 16.20 15.92 15.68 15.48 15.30 15.15 15.01 14.90 14.81
VCE = -5V, IC = -10mA 1.0E+08 2.0E+08 3.0E+08 4.0E+08 5.0E+08 6.0E+08 7.0E+08 8.0E+08 9.0E+08 1.0E+09 1.1E+09 1.2E+09 0.58 0.53 0.48 0.43 0.40 0.37 0.35 0.33 0.32 0.31 0.30 0.30 -23.24 -44.07 -61.50 -75.73 -87.36 -96.94 -104.92 -111.64 -117.36 -122.27 -126.51 -130.21 13.03 11.75 10.25 8.88 7.72 6.78 6.01 5.39 4.87 4.44 4.07 3.76 163.45 149.11 137.78 129.12 122.49 117.33 113.22 109.85 107.05 104.66 102.59 100.76 1.43E-02 2.58E-02 3.38E-02 3.90E-02 4.25E-02 4.48E-02 4.64E-02 4.76E-02 4.85E-02 4.92E-02 4.97E-02 5.02E-02 73.38 60.43 50.16 42.49 36.81 32.59 29.39 26.94 25.04 23.55 22.37 21.44 0.93 0.85 0.74 0.65 0.58 0.51 0.47 0.43 0.40 0.37 0.35 0.33 -13.46 -24.76 -33.10 -38.83 -42.63 -45.07 -46.60 -47.49 -47.97 -48.18 -48.20 -48.11
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FN3076.13 December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of PNP 3 m x 50 m Transistor
FREQ. (Hz) 1.3E+09 1.4E+09 1.5E+09 1.6E+09 1.7E+09 1.8E+09 1.9E+09 2.0E+09 2.1E+09 2.2E+09 2.3E+09 2.4E+09 2.5E+09 2.6E+09 2.7E+09 2.8E+09 2.9E+09 3.0E+09 |S11| 0.29 0.29 0.28 0.28 0.28 0.28 0.27 0.27 0.27 0.27 0.27 0.27 0.27 0.26 0.26 0.26 0.26 0.26 PHASE(S11) -133.46 -136.33 -138.89 -141.17 -143.21 -145.06 -146.73 -148.26 -149.65 -150.92 -152.10 -153.18 -154.17 -155.10 -155.96 -156.76 -157.51 -158.21 |S21| 3.49 3.25 3.05 2.87 2.70 2.56 2.43 2.31 2.20 2.10 2.01 1.93 1.86 1.79 1.72 1.66 1.60 1.55 PHASE(S21) 99.14 97.67 96.33 95.10 93.96 92.90 91.90 90.95 90.05 89.20 88.37 87.59 86.82 86.09 85.38 84.68 84.01 83.35 |S12| 5.06E-02 5.09E-02 5.12E-02 5.15E-02 5.18E-02 5.21E-02 5.23E-02 5.26E-02 5.28E-02 5.30E-02 5.33E-02 5.35E-02 5.38E-02 5.40E-02 5.42E-02 5.45E-02 5.47E-02 5.50E-02 (Continued) |S22| 0.32 0.31 0.30 0.29 0.28 0.27 0.27 0.26 0.26 0.25 0.25 0.25 0.24 0.24 0.24 0.24 0.24 0.23 PHASE(S22) -47.95 -47.77 -47.58 -47.39 -47.23 -47.09 -46.98 -46.91 -46.87 -46.87 -46.90 -46.97 -47.07 -47.18 -47.34 -47.55 -47.76 -48.00
PHASE(S12) 20.70 20.11 19.65 19.29 19.01 18.80 18.65 18.55 18.49 18.46 18.47 18.50 18.55 18.62 18.71 18.80 18.91 19.03
Typical Performance Curves
25 COLLECTOR CURRENT (mA) IB = 200A IB = 160A IB =120A 100m 10m 20 COLLECTOR CURRENT AND BASE CURRENT (A) 1m 100 10 1 100n 10n 1n 0.5 0.6 0.7 0.8 0.9 BASE TO EMITTER VOLTAGE (V) 1.0 VCE = 3V IC IB
15
10
IB = 80A IB = 40A
5
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 2. NPN COLLECTOR CURRENT AND BASE CURRENT vs BASE TO EMITTER VOLTAGE
8
FN3076.13 December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128 Typical Performance Curves
VCE = 3V GAIN BANDWIDTH PRODUCT (GHz)
(Continued)
10.0
160 140 DC CURRENT GAIN 120 100 80 60 40 20 0 1 10 100 1m 10m 100m
8.0
VCE = 5V
6.0
VCE = 1V
VCE = 3V
4.0
2.0
0 0.1
1.0
10
100
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (mA)
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT
FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (UHF 3 x 50 WITH BOND PADS)
-25 COLLECTOR CURRENT (mA)
IB = -400A COLLECTOR CURRENT AND BASE CURRENT (A) IB = -320A IB = -240A
-100m -10m -1m -100 -10 -1 -100n -10n
VCE = -3V
IC IB
-20
-15 IB = -160A -10 IB = -80A -5
0
0
-1
-2
-3
-4
-5
-1n -0.5
-0.6
-0.7
-0.8
-0.9
-1.0
COLLECTOR TO EMITTER VOLTAGE (V)
BASE TO EMITTER VOLTAGE (V)
FIGURE 5. PNP COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 6. PNP COLLECTOR CURRENT AND BASE CURRENT vs BASE TO EMITTER VOLTAGE
GAIN BANDWIDTH PRODUCT (GHz)
VCE = -3V
5.0 VCE = -5V 4.0 VCE = -3V 3.0 VCE = -1V 2.0
160 140 DC CURRENT GAIN 120 100 80 60 40 20 0 -1 -10 -100 -1m -10m -100m
1.0 -0.1
-1.0
-10
-100
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (mA)
FIGURE 7. PNP DC CURRENT GAIN vs COLLECTOR CURRENT
FIGURE 8. PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (UHF 3 x 50 WITH BOND PADS)
9
FN3076.13 December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128 Die Characteristics
DIE DIMENSIONS: 53 mils x 52 mils x 19 mils 1340m x 1320m x 483m METALLIZATION: Type: Metal 1: AlCu(2%)/TiW Thickness: Metal 1: 8kA 0.4kA Type: Metal 2: AlCu(2%) Thickness: Metal 2: 16kA 0.8kA PASSIVATION: Type: Nitride Thickness: 4kA 0.5kA PROCESS: UHF-1 SUBSTRATE POTENTIAL: (POWERED UP) Unbiased
Metallization Mask Layout
HFA3096, HFA3127, HFA3128
2 3 1340m (53 mils) 4 5 6 7
1
16
15 14 13 12 11
8
9
10
1320m (52 mils)
HFA3046
2 3 1340m (53 mils) 4 5 6 7
1
14
13 12
11 10 8 9
1320m (52 mils)
Pad numbers correspond to SOIC pinout.
10
FN3076.13 December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128 Small Outline Plastic Packages (SOIC)
N INDEX AREA H E -B1 2 3 SEATING PLANE -AD -CA h x 45o 0.25(0.010) M BM
M14.15 (JEDEC MS-012-AB ISSUE C)
14 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE INCHES SYMBOL A
L
MILLIMETERS MIN 1.35 0.10 0.33 0.19 8.55 3.80 5.80 0.25 0.40 14 0 MAX 1.75 0.25 0.51 0.25 8.75 4.00 6.20 0.50 1.27 8 NOTES 9 3 4 5 6 7 Rev. 0 12/93
MIN 0.0532 0.0040 0.013 0.0075 0.3367 0.1497 0.2284 0.0099 0.016 14 0
MAX 0.0688 0.0098 0.020 0.0098 0.3444 0.1574 0.2440 0.0196 0.050 8
A1 B C D E e
C
A1 0.10(0.004)
e
B 0.25(0.010) M C AM BS
0.050 BSC
1.27 BSC
H h L N
NOTES: 1. Symbols are defined in the "MO Series Symbol List" in Section 2.2 of Publication Number 95. 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension "D" does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension "E" does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. "L" is the length of terminal for soldering to a substrate. 7. "N" is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. The lead width "B", as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact.
11
FN3076.13 December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128 Small Outline Plastic Packages (SOIC)
N INDEX AREA H E -B1 2 3 SEATING PLANE -AD -CA h x 45 0.25(0.010) M BM
M16.15 (JEDEC MS-012-AC ISSUE C)
16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE INCHES SYMBOL A
L
MILLIMETERS MIN 1.35 0.10 0.33 0.19 9.80 3.80 5.80 0.25 0.40 16 8 0 8 MAX 1.75 0.25 0.51 0.25 10.00 4.00 6.20 0.50 1.27 NOTES 9 3 4 5 6 7 Rev. 1 6/05
MIN 0.0532 0.0040 0.013 0.0075 0.3859 0.1497 0.2284 0.0099 0.016 16 0
MAX 0.0688 0.0098 0.020 0.0098 0.3937 0.1574 0.2440 0.0196 0.050
A1 B C D E e H
C
A1 0.10(0.004)
0.050 BSC
1.27 BSC
e
B 0.25(0.010) M C AM BS
h L N
NOTES: 1. Symbols are defined in the "MO Series Symbol List" in Section 2.2 of Publication Number 95. 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension "D" does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension "E" does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. "L" is the length of terminal for soldering to a substrate. 7. "N" is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. The lead width "B", as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact.
12
FN3076.13 December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128 Quad Flat No-Lead Plastic Package (QFN) Micro Lead Frame Plastic Package (MLFP)
2X A 9 D1 D1/2 6 INDEX AREA N 1 2 3 E1/2 E1 9 2X 0.15 C B 2X 0.15 C A 4X 0 TOP VIEW A2 B E/2 E 2X 0.15 C B D D/2 0.15 C A
L16.3x3
16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE MILLIMETERS SYMBOL A A1 A2 A3 b D D1 D2 E E1 E2 1.35 0.20 0.30 e k L N Nd Ne P 1.35 0.18 MIN 0.80 NOMINAL 0.90 0.20 REF 0.23 3.00 BSC 2.75 BSC 1.50 3.00 BSC 2.75 BSC 1.50 0.50 BSC 0.40 16 4 4 0.60 12 0.50 1.65 1.65 0.30 MAX 1.00 0.05 1.00 NOTES 9 9 5, 8 9 7, 8, 10 9 7, 8, 10 8 2 3 3 9 9 Rev. 1 6/04
A
/ / 0.10 C 0.08 C
C
SEATING PLANE
SIDE VIEW NX b 5
A3
A1
9
4X P D2 (DATUM B) 4X P D2 2N
0.10 M C A B 7 8 NX k
1 (DATUM A) 6 INDEX AREA NX L Ne 8 (Nd-1)Xe REF. BOTTOM VIEW A1 NX b 5 2 3 E2 7 E2/2 8 (Ne-1)Xe REF.
NOTES: 1. Dimensioning and tolerancing conform to ASME Y14.5-1994. 2. N is the number of terminals. 3. Nd and Ne refer to the number of terminals on each D and E. 4. All dimensions are in millimeters. Angles are in degrees. 5. Dimension b applies to the metallized terminal and is measured between 0.15mm and 0.30mm from the terminal tip. 6. The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 identifier may be either a mold or mark feature. 7. Dimensions D2 and E2 are for the exposed pads which provide improved electrical and thermal performance. 8. Nominal dimensions are provided to assist with PCB Land Pattern Design efforts, see Intersil Technical Brief TB389.
C L
9 CORNER OPTION 4X
SECTION "C-C" C L
9. Features and dimensions A2, A3, D1, E1, P & are present when Anvil singulation method is used and not present for saw singulation.
L1 e 10 L
L1 CC e
10
L
10. Compliant to JEDEC MO-220VEED-2 Issue C, except for the E2 and D2 MAX dimension.
TERMINAL TIP FOR EVEN TERMINAL/SIDE
FOR ODD TERMINAL/SIDE
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com 13
FN3076.13 December 21, 2005

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